X-ray Irradiation Induced Reversible Resistance Change in Pt/TiO2/Pt Cells
- Authors
- Chang, Seo Hyoung; Kim, Jungho; Phatak, Charudatta; D'Aquila, Kenneth; Kim, Seong Keun; Kim, Jiyoon; Song, Seul Ji; Hwang, Cheol Seong; Eastman, Jeffrey A.; Freeland, John W.; Hong, Seungbum
- Issue Date
- 2014-02
- Publisher
- AMER CHEMICAL SOC
- Citation
- ACS NANO, v.8, no.2, pp.1584 - 1589
- Abstract
- The interaction between X-rays and matter is an intriguing topic for both fundamental science and possible applications. In particular, synchrotron-based brilliant X-ray beams have been used as a powerful diagnostic tool to unveil nanoscale phenomena in functional materials. However, it has not been widely investigated how functional materials respond to the brilliant X-rays. Here, we report the X-ray-induced reversible resistance change in 40-nm-thick TiO2 films sandwiched by Pt top and bottom electrodes, and propose the physical mechanism behind the emergent phenomenon. Our findings indicate that there exists a photovoltaic-like effect, which modulates the resistance reversibly by a few orders of magnitude, depending on the intensity of impinging X-rays. We found that this effect, combined with the X-ray irradiation induced phase transition confirmed by transmission electron microscopy, triggers a nonvolatile reversible resistance change. Understanding X-ray-controlled reversible resistance changes can provide possibilities to control initial resistance states of functional materials, which could be useful for future information and energy storage devices.
- Keywords
- MEMRISTIVE DEVICES; MEMRISTIVE DEVICES; resistive switching; X-ray irradiation; photovoltaic effect; Magneli phase; Joule heating; defect generation
- ISSN
- 1936-0851
- URI
- https://pubs.kist.re.kr/handle/201004/127134
- DOI
- 10.1021/nn405867p
- Appears in Collections:
- KIST Article > 2014
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