Dielectric properties of continuous composition spreaded MgO-Ta2O5 thin films

Authors
Kim, Yun HoeSong, Jong-HanKim, Jin SangYoon, Seok-JinPark, Kyung BongChoi, Ji-Won
Issue Date
2011-11-01
Publisher
ELSEVIER SCIENCE BV
Citation
APPLIED SURFACE SCIENCE, v.258, no.2, pp.843 - 847
Abstract
The dielectric properties of MgO-Ta2O5 continuous composition spread (CCS) thin films were investigated. The MgO-Ta2O5 CCS thin films were deposited on Pt/Ti/SiO2/Si substrates by off-Axis RF magnetron sputtering system, and then the films were annealed at 350 degrees C with rapid thermal annealing system in vacuum. The dielectric constant and loss of MgO-Ta2O5 CCS thin films were plotted via 1500 micron-step measuring. The specific point of Ta2O5-MgO CCS thin film (post annealed at 350 degrees C) showing superior dielectric properties of high dielectric constant (k similar to 28) and low dielectric loss (tan delta < 0.004) at 1 MHz were found in the area of 3-5 mm apart from Ta2O5 side on the substrate. The cation&apos;s composition of thin film was Mg:Ta = 0.4:2 at%. (C) 2011 Elsevier B. V. All rights reserved.
Keywords
MIM CAPACITORS; DENSITY; METAL; PERFORMANCE; ELECTRODE; MIM CAPACITORS; DENSITY; METAL; PERFORMANCE; ELECTRODE; High-k; Thin films; Continuous composition spread; RF magnetron sputtering
ISSN
0169-4332
URI
https://pubs.kist.re.kr/handle/201004/129812
DOI
10.1016/j.apsusc.2011.09.004
Appears in Collections:
KIST Article > 2011
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