Sensing of Prostate-Specific Antigen Using Trimmed Silicon Nanowire Field Effect Transistors

Authors
Kang, Gil BumKwon, Soon-MookKim, Young HwanKim, Yong TaeSohn, Young-Soo
Issue Date
2011-08
Publisher
AMER SCIENTIFIC PUBLISHERS
Citation
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.6, no.3, pp.330 - 333
Abstract
A field effect transistor (FET) biosensor with a trimmed silicon nanowire (SiNW) structure was designed, fabricated, and characterized for the selective and real-time detection of the prostate-specific antigen (PSA), a biomarker for diagnosing prostate cancer. The SiNW FET was fabricated using only top-down CMOS process techniques, including photoresist trimming. To detect PSA, the SiNW surface was modified with an antibody of PSA (anti-PSA). The sensing of PSA then occured via real-time conductance changes of the SiNW. The output response of the SiNW FET biosensor was linearly related to the PSA concentration within a range of 50 pg/ml and 500 pg/ml. When investigating the selectivity, the SiNW modified to detect PSA did not respond to the C-reactive protein (CRP). Thus, the results demonstrated the feasibility of the proposed biosensor for diagnosing prostate cancer.
Keywords
SENSOR; IMMUNOASSAY; BIOSENSOR; SENSOR; IMMUNOASSAY; BIOSENSOR; Field Effect Transistor; Silicon Nanowire; Prostate-Specific Antigen; Top-Down CMOS Process
ISSN
1555-130X
URI
https://pubs.kist.re.kr/handle/201004/130148
DOI
10.1166/jno.2011.1179
Appears in Collections:
KIST Article > 2011
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE