Sensing of Prostate-Specific Antigen Using Trimmed Silicon Nanowire Field Effect Transistors
- Authors
- Kang, Gil Bum; Kwon, Soon-Mook; Kim, Young Hwan; Kim, Yong Tae; Sohn, Young-Soo
- Issue Date
- 2011-08
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Citation
- JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.6, no.3, pp.330 - 333
- Abstract
- A field effect transistor (FET) biosensor with a trimmed silicon nanowire (SiNW) structure was designed, fabricated, and characterized for the selective and real-time detection of the prostate-specific antigen (PSA), a biomarker for diagnosing prostate cancer. The SiNW FET was fabricated using only top-down CMOS process techniques, including photoresist trimming. To detect PSA, the SiNW surface was modified with an antibody of PSA (anti-PSA). The sensing of PSA then occured via real-time conductance changes of the SiNW. The output response of the SiNW FET biosensor was linearly related to the PSA concentration within a range of 50 pg/ml and 500 pg/ml. When investigating the selectivity, the SiNW modified to detect PSA did not respond to the C-reactive protein (CRP). Thus, the results demonstrated the feasibility of the proposed biosensor for diagnosing prostate cancer.
- Keywords
- SENSOR; IMMUNOASSAY; BIOSENSOR; SENSOR; IMMUNOASSAY; BIOSENSOR; Field Effect Transistor; Silicon Nanowire; Prostate-Specific Antigen; Top-Down CMOS Process
- ISSN
- 1555-130X
- URI
- https://pubs.kist.re.kr/handle/201004/130148
- DOI
- 10.1166/jno.2011.1179
- Appears in Collections:
- KIST Article > 2011
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