Gate modulation of spin precession in a semiconductor channel

Abstract

Gate control of spin precession is experimentally presented in an InAs quantum well with ferromagnetic spin injector and detector. The gate electric field modulates the spin-orbit interaction and spin precession. As a consequence, spin dependent conductance in the InAs channel is controlled by the gate voltage. Using ballistic spin transport theory, gate modulation results are proved to fit very well with gate voltage dependence of Rashba field strength.