Hg1-xCdxTe를 이용한 64×1 선형 적외선 감지 소자 제작

Other Titles
Fabrication of 64×1 linear array infrared detector using Hg1-xCdxTe
Authors
김진상서상희
Issue Date
2009-04
Publisher
한국센서학회
Citation
센서학회지, v.18, no.2, pp.135 - 138
Abstract
64×1 forcal plane infrared detector has been fabricated by using HgCdTe epi layer. HgCdTe was grown on GaAs substrate by using metal organic chemical vapor deposition. This paper describes key developments in the epi layer growth and device fabrication process. The performance of IR imaging system is summarized.
Keywords
HgCdTe; IR detector; MOCVD
ISSN
1225-5475
URI
https://pubs.kist.re.kr/handle/201004/132602
Appears in Collections:
KIST Article > 2009
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