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Transport properties of metal/insulator/semiconductor tunnel junctions

Authors
Lee, JH; Park, SY; Jun, KI; Shin, KH; Hong, J; Rhie, K; Lee, BC
Issue Date
2004-06
Publisher
WILEY-V C H VERLAG GMBH
Citation
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, v.241, no.7, pp.1506 - 1509
Abstract
The transport properties of ferromagnet/Al2O3/semiconductor tunnel junctions were investigated. Si and GaAs substrates were used, and CoFe and NiFe were taken for ferromagnets. Diode characteristics were observed in current-voltage curves. The dependences on the Al2O3 thickness and temperature were also studied. It is found that the Al2O3 layer plays a crucial role in preventing inter-diffusion at the interface. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Keywords
ELECTRICAL SPIN INJECTION; ELECTRICAL SPIN INJECTION; FIS tunnel juction; spin injection; diode
ISSN
0370-1972
URI
https://pubs.kist.re.kr/handle/201004/137549
DOI
10.1002/pssb.200304693
Appears in Collections:
KIST Article > 2004
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