Electrical characterization of InAs/InP self-assembled quantum dots by deep-level transient spectroscopy

Authors
Kim, EKKim, JSHwang, HPark, KYoon, EKim, JHPark, IWPark, YJ
Issue Date
2004-06
Publisher
INST PURE APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.43, no.6B, pp.3825 - 3827
Abstract
We have investigated the confined energy level of InAs quantum dots embedded in InP layer using deep-level transient spectroscopy (DLTS) measurement. The higher temperature for the capping layer growth yields a low activation energy (E-a = 0.56 eV) and a low barrier height (Ee(B) = 0.18 eV) whereas the lower temperature yields a high activation energy (E-a = 0.82 eV) and high barrier height (Ee(B) = 0.52 eV). It was found that the higher temperature for the growth of the capping layer provides a condition for enhancing the confinement energy in InAs QDs/InP structure.
Keywords
INP; INP; deep-level transient spectroscopy; quantum dot; energy level; InAs; InP; capture barrier
ISSN
0021-4922
URI
https://pubs.kist.re.kr/handle/201004/137561
DOI
10.1143/JJAP.43.3825
Appears in Collections:
KIST Article > 2004
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