Auger processes in InGaAs QDs grown by using the droplet method

Authors
Lee, JIHan, IKKoguchi, NKuroda, TMinami, F
Issue Date
2003-10
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.43, no.4, pp.553 - 556
Abstract
We present the carrier dynamics of InGaAs quantum dots with and without cladding layers grown by heterogeneous droplet epitaxy. Time-resolved photoluminescence spectroscopy showed double exponential decays for the first excited states, including an initial fast decay, of highly excited quantum dots with cladding layers in contrast to the single exponential decay in quantum dots without cladding layers. Moreover, the GaAs barriers had slow rise times of about 220 ps, which corresponded to the initial fast decay time of the first excited states of quantum dots. These results provide evidence of Auger processes between the carriers in the GaAs barriers and those in the first-excited states of quantum dots.
Keywords
INAS/GAAS QUANTUM DOTS; ENERGY RELAXATION; CARRIER DYNAMICS; SCATTERING; CAPTURE; EPITAXY; quantum dots; Auger processes; carrier relaxation; time-resolved photoluminescence
ISSN
0374-4884
URI
https://pubs.kist.re.kr/handle/201004/138154
Appears in Collections:
KIST Article > 2003
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