Effects of doping profile on characteristics of InAs quantum dots

Abstract

Capacitance-voltage measurements were carried Out to investigate the effects of the doping profile on characteristics of self-assembled InAs quantum dots. Using this technique, we observed features of zero-dimensional electron confinement indicating the presence of quantum dots. However, the number of confined states differed depending on the doping profile, and this fact was confirmed by photoluminescence measurements. The equation in the depletion approximation led us to calculate the distribution of carriers as a function of depth from the sample surface. and the results are in agreement with the depth of the quantum dot layer.