Temperature dependence of tunneling magnetoresistance: Double-barrier versus single-barrier junctions

Authors
Lee, JHLee, KILee, WLShin, KHLee, JSRhie, KLee, BC
Issue Date
2002-05-15
Publisher
AMER INST PHYSICS
Citation
JOURNAL OF APPLIED PHYSICS, v.91, no.10, pp.7956 - 7958
Abstract
The temperature dependence of tunneling magnetoresistance (TMR) is studied for spin valve type double-barrier tunnel junctions. Normalized TMR values for double-barrier tunnel junctions (DBTJs) and single-barrier junctions (SBTJs) are plotted as functions of temperature and it is found that the DBTJ shows stronger temperature dependence of TMR than the SBTJ. The strong temperature dependence of TMR for the DBTJ is explained in terms of temperature dependence of the spin polarization of the middle magnetic layer and decrease of the spin coherence length with increasing temperature. (C) 2002 American Institute of Physics.
Keywords
VOLTAGE; VOLTAGE; tunneling magnetoresistance
ISSN
0021-8979
URI
https://pubs.kist.re.kr/handle/201004/139532
DOI
10.1063/1.1452232
Appears in Collections:
KIST Article > 2002
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE