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Temperature dependence of the tunneling magnetoresistance for tunnel junctions

Authors
Lee, JH; Chang, IW; Byun, SJ; Rhie, K; Shin, KH; Lee, KI; Ha, JG; Lee, BC
Issue Date
2002-02
Publisher
ELSEVIER
Citation
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.240, no.1-3, pp.149 - 151
Abstract
The temperature dependence of the tunneling magnetoresistance (TMR) for magnetic tunneling junctions is investigated experimentally before and after the sample is annealed. As grown, the TMR is observed to increase with temperature from 80 to 160 K. A modified Julliere model in conjunction with a spin-dependent two-step tunneling is suggested to describe this temperature dependence. (C) 2002 Elsevier Science B.V. All rights reserved.
Keywords
magnetoresistance; thin films; TMR; MTJ
ISSN
0304-8853
URI
https://pubs.kist.re.kr/handle/201004/139816
DOI
10.1016/S0304-8853(01)00768-5
Appears in Collections:
KIST Article > 2002
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