Soft X-ray fluorescence and photoluminescence of Si nanocrystals embedded in SiO2

Authors
Chang, GSSon, JHChae, KHWhang, CNKurmaev, EZShamin, SNGalakhov, VRMoewes, AEderer, DL
Issue Date
2001-03
Publisher
SPRINGER-VERLAG
Citation
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.72, no.3, pp.303 - 306
Abstract
We have used ion-beam mixing to form Si nanocrystals in SiO2 and SiO2/Si multilayers. and applied photoluminescence and soft-X-ray emission spectroscopy to study the nanoparticles. Ion-beam mixing followed by heat treatment at 1100 degreesC for 2 h forms the Si nanocrystals. The ion-beam-mixed sample shows higher PL intensity than that ot a Si-implanted SiO2 film. Photon and electron-excited Si L-2.3 X-ray emission measurements were carried out to confirm the formation of Si nanocrystal in SiO2 matrix after ion-beam mixing and heat treatment. It is found that Si L-2.3 X-ray emission spectra of ion-beam-mixed Si monolayers in heat-treated SiO2 films lead to noticeable changes in the spectroscopic fine structure.
Keywords
EMISSION-SPECTROSCOPY; SILICON; SPECTRA; SYSTEM; FILMS; EMISSION-SPECTROSCOPY; SILICON; SPECTRA; SYSTEM; FILMS; nanocrystals; photoluminescence; Ion beam mixing; x-ray emission spectroscopy; SiO2
ISSN
0947-8396
URI
https://pubs.kist.re.kr/handle/201004/140699
DOI
10.1007/s003390000558
Appears in Collections:
KIST Article > 2001
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