Effect of residual stress on the Raman-spectrum analysis of tetrahedral amorphous carbon films
- Authors
- Shin, JK; Lee, CS; Lee, KR; Eun, KY
- Issue Date
- 2001-01-29
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.78, no.5, pp.631 - 633
- Abstract
- Tetrahedral amorphous carbon (ta-C) films deposited by the filtered vacuum arc process have large compressive residual growth stresses that depend on the atomic-bond structure. We observed that the G peak of the Raman spectrum shifts to higher frequency by 4.1 +/-0.5 cm(-1)/GPa due to the residual compressive stress. This value agrees well with the calculated Raman-peak shift of the graphite plane due to applied stress. By considering the effect of residual stress on the G-peak position, we also observe a similar dependence between the G-peak position and the atomic-bond structure in both ta-C and hydrogenated amorphous carbon (a-C:H) films; namely, that a higher sp(2) bond content shifts the G-peak position to higher frequency. (C) 2001 American Institute of Physics.
- Keywords
- CHEMICAL-VAPOR-DEPOSITION; SPECTROSCOPY; ARC; CHEMICAL-VAPOR-DEPOSITION; SPECTROSCOPY; ARC; Ta-C
- ISSN
- 0003-6951
- URI
- https://pubs.kist.re.kr/handle/201004/140768
- DOI
- 10.1063/1.1343840
- Appears in Collections:
- KIST Article > 2001
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