Characterization of Si3N4/SiC nanocomposite by Raman scattering and XPS

Authors
Cho, WSOh, YSKim, CSOsada, MKakihana, MLim, DSCheong, DS
Issue Date
1999-03-30
Publisher
ELSEVIER SCIENCE SA
Citation
JOURNAL OF ALLOYS AND COMPOUNDS, v.285, no.1-2, pp.255 - 259
Abstract
We have synthesized Si3N4/SiC nanocomposites using a commercial polymer. The formed Si3N4/SiC nanocomposites have been studied using Raman scattering and X-ray photoelectron spectroscopy (WS). The Raman scattering measurements showed that the formation of SiC started at 1200 degrees C and that the main phase was 3C-SiC, The XPS results suggested that the SiC nanoparticles were formed by a chemical reaction of Si provided from Si3N4 with free carbon obtained by pyrolysis of polymer. The XPS results also indicated that residual carbon reacted with N-2 to form CNx, which remained as an impurity phase in the final product. (C) 1999 Elsevier Science S.A. All rights reserved.
Keywords
SILICON-CARBIDE; FILMS; SPECTROSCOPY; FABRICATION; TEMPERATURE; SURFACES; SILICON-CARBIDE; FILMS; SPECTROSCOPY; FABRICATION; TEMPERATURE; SURFACES; Si3N4/SiC; nanocomposite; Raman scattering; X-ray photoelectron spectroscopy
ISSN
0925-8388
URI
https://pubs.kist.re.kr/handle/201004/142328
DOI
10.1016/S0925-8388(99)00007-9
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KIST Article > Others
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