Characterization of Si3N4/SiC nanocomposite by Raman scattering and XPS
- Authors
- Cho, WS; Oh, YS; Kim, CS; Osada, M; Kakihana, M; Lim, DS; Cheong, DS
- Issue Date
- 1999-03-30
- Publisher
- ELSEVIER SCIENCE SA
- Citation
- JOURNAL OF ALLOYS AND COMPOUNDS, v.285, no.1-2, pp.255 - 259
- Abstract
- We have synthesized Si3N4/SiC nanocomposites using a commercial polymer. The formed Si3N4/SiC nanocomposites have been studied using Raman scattering and X-ray photoelectron spectroscopy (WS). The Raman scattering measurements showed that the formation of SiC started at 1200 degrees C and that the main phase was 3C-SiC, The XPS results suggested that the SiC nanoparticles were formed by a chemical reaction of Si provided from Si3N4 with free carbon obtained by pyrolysis of polymer. The XPS results also indicated that residual carbon reacted with N-2 to form CNx, which remained as an impurity phase in the final product. (C) 1999 Elsevier Science S.A. All rights reserved.
- Keywords
- SILICON-CARBIDE; FILMS; SPECTROSCOPY; FABRICATION; TEMPERATURE; SURFACES; SILICON-CARBIDE; FILMS; SPECTROSCOPY; FABRICATION; TEMPERATURE; SURFACES; Si3N4/SiC; nanocomposite; Raman scattering; X-ray photoelectron spectroscopy
- ISSN
- 0925-8388
- URI
- https://pubs.kist.re.kr/handle/201004/142328
- DOI
- 10.1016/S0925-8388(99)00007-9
- Appears in Collections:
- KIST Article > Others
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