Thin film growth and surface modification by keV ion beam

Authors
Choi, SCPark, YWChoi, WKKim, KHCho, JSHan, SCho, JJung, SHan, YGYoo, BKJung, HJKoh, SK
Issue Date
1998-12
Publisher
JAPAN J APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.37, no.12B, pp.6984 - 6990
Abstract
High-quality ZnO film and highly wettable polymethylmethacrylate (PMMA) are obtained by using a keV inn beam. ZnO films are grown on glass substrates by ion beam sputter deposition. changing the oxygen/argon gas ratio, ion beam energy, and substrate temperature. Physical properties of ZnO films were investigated by X-ray diffraction, Rutherford backscattering spectroscopy, and the Van der Pauw method. All the films show a strong preferred orientation along the c-axis. The electrical resistivity is varied from 10(-3) to 10(6) Omega cm and its dependence on the deposition parameters is discussed. The PMMA surface was modified by the ion-assisted reaction technique. Ion dose, ion energy, and oxygen gas now rate are varied from 5 x 10(15) to 1 x 10(17) ions/cm(2), from 0.6 to 1.2 kV, and from 0 to 8 ml/min, respectively. A highly wettable PMMA surface can be obtained by irradiating oxygen ions in an oxygen gas environment. X-ray photoelectron spectroscopic analysis shows that hydrophilic groups are formed on the surface of PMMA.
Keywords
ion beam modification; ion beam sputter deposition; ZnO thin film; polymethylmethacrylate; wettability
ISSN
0021-4922
URI
https://pubs.kist.re.kr/handle/201004/142711
DOI
10.1143/JJAP.37.6984
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KIST Article > Others
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