Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Woo, DH | - |
dc.contributor.author | Han, IK | - |
dc.contributor.author | Choi, WJ | - |
dc.contributor.author | Lee, S | - |
dc.contributor.author | Kim, HJ | - |
dc.contributor.author | Lee, JI | - |
dc.contributor.author | Kim, SH | - |
dc.contributor.author | Kang, KN | - |
dc.contributor.author | Choi, SG | - |
dc.contributor.author | Kim, YD | - |
dc.contributor.author | Yoo, SD | - |
dc.contributor.author | Aspnes, DE | - |
dc.contributor.author | Rhee, SJ | - |
dc.contributor.author | Woo, JC | - |
dc.date.accessioned | 2024-01-21T16:45:17Z | - |
dc.date.available | 2024-01-21T16:45:17Z | - |
dc.date.created | 2021-09-03 | - |
dc.date.issued | 1998-08 | - |
dc.identifier.issn | 0167-9317 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/142949 | - |
dc.description.abstract | We present optical studies of a series of GaAs/AlAs short period superlattices grown by molecular beam epitaxy. The structural properties were examined by X-ray diffraction measurements. The quantum confinement of the electronic and the vibronic states were observed in the low temperature photoluminescence and Raman scattering experiments, respectively. Spectroscopic ellipsometric (SE) measurements were also performed. We found a new structure at the lower E-2 peak, which is the best resolution of the E-2 structure in these SLs so far obtained by SE. (C) 1998 Elsevier Science B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | GAAS-ALAS | - |
dc.subject | TRANSITIONS | - |
dc.subject | ALXGA1-XAS | - |
dc.title | Optical characterization of GaAs/AlAs short period superlattices | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/S0167-9317(98)00173-7 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | MICROELECTRONIC ENGINEERING, v.43-4, pp.265 - 270 | - |
dc.citation.title | MICROELECTRONIC ENGINEERING | - |
dc.citation.volume | 43-4 | - |
dc.citation.startPage | 265 | - |
dc.citation.endPage | 270 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000075867000039 | - |
dc.identifier.scopusid | 2-s2.0-0346940341 | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.subject.keywordPlus | GAAS-ALAS | - |
dc.subject.keywordPlus | TRANSITIONS | - |
dc.subject.keywordPlus | ALXGA1-XAS | - |
dc.subject.keywordAuthor | MBE | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.