The mathematical simulation of excitation processes in xenon low-pressure plasmas
- Authors
- Bougrove, GE; Kralkina, EA; Antonova, TB; Choi, WK; Jung, HJ; Koh, SK; Kondranin, SG
- Issue Date
- 1998-03
- Publisher
- KOREAN PHYSICAL SOC
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.32, no.3, pp.195 - 199
- Abstract
- The excitation mechanisms of Xe atoms in low-pressure plasmas was analyzed in the frame of the collisional radiative model. The calculations were carried out for the following plasma parameters: an atom concentration in the range of n(0) = 10(10) - 10(16) cm(-3) a degree of plasma ionization in the range of n(+)/n(0) = 10(-5) - 1, and an optical plasma thickness in the range of theta = 1(1) - 10(3). It was assumed that the electron energy distribution could be described by a Maxwell function with a temperature T-epsilon = 0.5-20 eV. For all considered plasma parameters the obtained results exhibited essentially the non-equilibrium character of atoms distribution over the excited states.
- Keywords
- Xenon plasma
- ISSN
- 0374-4884
- URI
- https://pubs.kist.re.kr/handle/201004/143224
- Appears in Collections:
- KIST Article > Others
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