Annealing process of Pt/Ti/TiO2/polysilicon/Si3N4/Si-wafer using as a substrate of Pb(Zr0.53Ti0.47)O-3 thin films for piezoelectric microelectromechanical system devices.

Abstract

Pb(Zr0.53Ti0.47)O-3 thin films have been deposited on the Pt/Ti/SiO2/Si-wafer substrate and Pt/Ti/TiO2/polysilicon/Si3N4/Si-wafer substrate with and without post-thermal annealing at 950 degrees C for 30 minutes. Hysteresis curve and piezoelectric constant (d(33)) of the PZT thin films are reported. X-ray diffraction analysis of Pb(Zr0.53Ti0.47)O-3 thin films and cross section view of the Pb(Zr0.53Ti0.47)O-3 deposited on the substrates were observed. Piezoelectric constant (d(33)) of Pb(Zr0.53Ti0.47)O-3 thin film deposited on the Pt/Ti/TiO2/polysilicon/Si3N4/Si-wafer substrate was measured to be 158 pm/V determined by using single beam laser interferometer and coercive field and remanent polarization were 39.5 mu C/cm(2) and 65.2 kV/cm, respectively. The graphs of the piezoelectric constant results and hysteresis curves is reported.