Role of abnormal grain growth on the ferroelectric properties of SrBi2Ta2O9 thin films fabricated by RF magnetron sputtering

Abstract

With increasing sputtering pressure and post-annealing temperature, uniform rodlike grains were obtained through bimodal grain size distribution. But, (00l) peaks of SrBi2Ta2O9 thin films were increased. Improvement of electrical properties is expected by removing the abnormal grain growth and c-axis oriented SrBi2Ta2O9.