유기금속 화학기상 증착법으로 성장시킨 탄소 도핑된 GaAs 에피층의 띠간격 축소 효과

Authors
김성일민석기김은규조신호이달진최인훈
Issue Date
1997-11
Citation
응용물리 ., v.10, no.6, pp.558 - 564
Keywords
MOCVD
URI
https://pubs.kist.re.kr/handle/201004/143514
Appears in Collections:
KIST Article > Others
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