Anomalous real space charge transfer through thick barriers in GaAs/AlxGa1-x as a symmetric double quantum wells: AlxGa1-xAs as a percolating barrier

Authors
Kim, DSKo, HSKim, YMRhee, SJHong, SCYee, YHKim, WSWoo, JCChoi, HJIhm, JWoo, DHKang, KN
Issue Date
1996-10
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Citation
SOLID STATE COMMUNICATIONS, v.100, no.4, pp.231 - 235
Abstract
Anomalously large real space charge transfer through thick barriers in GaAs asymmetric double quantum wells is studied. This inter-well excitonic transfer is very large when the barrier is the Al0.3Ga0.7As alloy, but disappears when the barrier is an equivalent GaAs/AlAs digital alloy. These results combined with observed x and barrier thickness dependence suggest that the inhomogeneities in the barrier may be responsible for this transfer. This picture is supported by the quantum mechanical calculation in three dimensions. Copyright (C) 1996 Published by Elsevier Science Ltd
Keywords
SCANNING-TUNNELING-MICROSCOPY; LO PHONONS; SUPERLATTICES; GAAS; EXCITONS; DYNAMICS; SCANNING-TUNNELING-MICROSCOPY; LO PHONONS; SUPERLATTICES; GAAS; EXCITONS; DYNAMICS; nanostructures; epitaxy; electronic transport; luminescence
ISSN
0038-1098
URI
https://pubs.kist.re.kr/handle/201004/144286
DOI
10.1016/0038-1098(96)00406-1
Appears in Collections:
KIST Article > Others
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE