DSpace at KIST: MOCVD 법에 의한 GaAs/AlGaAs 에피층의 수평 방향 성장률에 대한 CCl4 유입 효과

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DC Field	Value	Language
dc.contributor.author	김성일	-
dc.contributor.author	김무성	-
dc.contributor.author	김용	-
dc.contributor.author	황성민	-
dc.contributor.author	민병돈	-
dc.contributor.author	손창식	-
dc.contributor.author	김은규	-
dc.contributor.author	민석기	-
dc.date.accessioned	2024-01-21T19:14:44Z	-
dc.date.available	2024-01-21T19:14:44Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1996-09	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/144322	-
dc.title	MOCVD 법에 의한 GaAs/AlGaAs 에피층의 수평 방향 성장률에 대한 CCl4 유입 효과	-
dc.type	Article	-
dc.description.journalClass	3	-
dc.identifier.bibliographicCitation	응용물리 = Ungyong Mulli (The Korean physical society), v.9, no.5, pp.636 - 641	-
dc.citation.title	응용물리 = Ungyong Mulli (The Korean physical society)	-
dc.citation.volume	9	-
dc.citation.number	5	-
dc.citation.startPage	636	-
dc.citation.endPage	641	-
dc.subject.keywordAuthor	MOCVD	-
dc.subject.keywordAuthor	GaAs/AlGaAs	-
dc.subject.keywordAuthor	lateral growth rate	-
dc.subject.keywordAuthor	CCl4 gas	-

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