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MOCVD 법에 의한 GaAs/AlGaAs 에피층의 수평 방향 성장률에 대한 CCl4 유입 효과

Authors

김성일; 김무성; 김용; 황성민; 민병돈; 손창식; 김은규; 민석기

Issue Date

1996-09

Citation

응용물리 = Ungyong Mulli (The Korean physical society), v.9, no.5, pp.636 - 641

Keywords

MOCVD; GaAs/AlGaAs; lateral growth rate; CCl4 gas

URI

https://pubs.kist.re.kr/handle/201004/144322

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KIST Article > Others

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