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CBr4 가스를 사용하여 (100) 및 2 ˚ off (100) GaAs 기판 위에 성장한 탄소도핑된 GaAs 에피층의 전기적 성질

Authors

손창식; 김성일; 민병돈; 김은규; 민석기; 최인훈

Issue Date

1996-07

Citation

응용물리 = Ungyong Mulli (The Korean physical society), v.9, no.4, pp.529 - 534

Keywords

CBr4; 2 ˚ off (100) GaAs; carbon doping; MOCVD

URI

https://pubs.kist.re.kr/handle/201004/144400

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KIST Article > Others

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