Effects of a new stacking method on characteristics of multilayered BaTiO3 thin film
- Authors
- Song, MH; Lee, YH; Hahn, TS; Oh, MH; Yoon, KH
- Issue Date
- 1996-04-01
- Publisher
- AMER INST PHYSICS
- Citation
- JOURNAL OF APPLIED PHYSICS, v.79, no.7, pp.3744 - 3748
- Abstract
- A new deposition method used to prepare BaTiO3 thin films resulted in multilayered structure with higher dielectric constant, capacitance per unit area, and breakdown strength than those prepared by a conventional stacking method; the new method continuously decreased the substrate temperature after initial deposition of a polycrystalline BaTiO3 layer. The observed high dielectric constant could be explained only by a multilayered amorphous/microcrystalline/polycrystalline structure, the nature of which was confirmed by scanning electron microscopy and index of refraction measurement. Well-defined ferroelectric hysteresis loops were observed as well with insignificant leakage current effects. (C) 1996 American Institute of Physics.
- Keywords
- FABRICATION; DEPOSITION; CAPACITORS; FABRICATION; DEPOSITION; CAPACITORS
- ISSN
- 0021-8979
- URI
- https://pubs.kist.re.kr/handle/201004/144472
- DOI
- 10.1063/1.361208
- Appears in Collections:
- KIST Article > Others
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