Effects of a new stacking method on characteristics of multilayered BaTiO3 thin film

Authors
Song, MHLee, YHHahn, TSOh, MHYoon, KH
Issue Date
1996-04-01
Publisher
AMER INST PHYSICS
Citation
JOURNAL OF APPLIED PHYSICS, v.79, no.7, pp.3744 - 3748
Abstract
A new deposition method used to prepare BaTiO3 thin films resulted in multilayered structure with higher dielectric constant, capacitance per unit area, and breakdown strength than those prepared by a conventional stacking method; the new method continuously decreased the substrate temperature after initial deposition of a polycrystalline BaTiO3 layer. The observed high dielectric constant could be explained only by a multilayered amorphous/microcrystalline/polycrystalline structure, the nature of which was confirmed by scanning electron microscopy and index of refraction measurement. Well-defined ferroelectric hysteresis loops were observed as well with insignificant leakage current effects. (C) 1996 American Institute of Physics.
Keywords
FABRICATION; DEPOSITION; CAPACITORS; FABRICATION; DEPOSITION; CAPACITORS
ISSN
0021-8979
URI
https://pubs.kist.re.kr/handle/201004/144472
DOI
10.1063/1.361208
Appears in Collections:
KIST Article > Others
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE