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GaAs(100) 및 GaAs(311)A 기판위에 성장시킨 InGaAs 에피층의 격자변형에 관한 연구

Authors

손창식; 진현철; 한철구; 이정훈; 강준모; 김용; 김무성; 민석기; 김창수

Issue Date

1996-01

Citation

응용물리 = Ungyong Mulli (The Korean physical society), v.9, no.1, pp.67 - 72

Keywords

MOCVD; luttice distortion; InGaAs

URI

https://pubs.kist.re.kr/handle/201004/144599

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KIST Article > Others

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