ANALYSIS OF THE FORMATION OF BATIO3 ISLAND DEPOSITED ON (111) INSB BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION AT LOW-TEMPERATURE

Authors
YOON, YSYOON, YKKANG, WNYOM, SS
Issue Date
1994-07
Publisher
ELSEVIER SCIENCE BV
Citation
JOURNAL OF CRYSTAL GROWTH, v.140, no.3-4, pp.355 - 360
Abstract
Islands of BaTiO3 in a thin film deposited on a (111) InSb substrate by metalorganic chemical vapor deposition at a temperature of 300-degrees-C were investigated. Refractive index measured by ellipsometer using a He-Ne laser was 1.95, which is nearly the same value as that of amorphous BaTiO3 with microcrystals. X-ray diffraction peaks showed the deposit to be mostly amorphous and partly crystalline having the [110]BaTiO3 direction normal to the (111) InSb. Transmission electron microscopy results showed that partially epitaxial BaTiO3 islands with periodic misfit dislocations had been formed at the interface between amorphous BaTiO3 thin layer and the (111) InSb substrate. These BaTiO3 islands on the (111) InSb substrate formed at a low growth temperature were three-dimensional nuclei which were closely associated with surface irregularities of the (111) InSb substrate.
Keywords
PULSED LASER DEPOSITION; THIN-FILMS; BARIUM-TITANATE; ELECTRICAL-PROPERTIES; EPITAXIAL-GROWTH; SILICON; PULSED LASER DEPOSITION; THIN-FILMS; BARIUM-TITANATE; ELECTRICAL-PROPERTIES; EPITAXIAL-GROWTH; SILICON
ISSN
0022-0248
URI
https://pubs.kist.re.kr/handle/201004/145543
DOI
10.1016/0022-0248(94)90310-7
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KIST Article > Others
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