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Study on the lateral island extension for growth-intersupted GaAs/Al0.3Ga0.7As single quantum wells grown by atmospheric-pressure metalorganic chemical vapor deposition

Authors

김용; 김성일; 김무성; 민석기; 이민석; 김영덕

Issue Date

1993-01

Citation

Journal of Korean applied physics, v.v. 26, no.no. 6, pp.705 - 709

Keywords

lateral island extension; MOCVD; GaAs/AlGaAs

URI

https://pubs.kist.re.kr/handle/201004/146287

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KIST Article > Others

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