INITIAL-STAGE AND RECONSTRUCTION OF GAAS/SI HETEROSTRUCTURES

Abstract

GaAs epitaxial layers on Si(1 0 0) substrates having a single or a double domain 2 x 1 have been grown by molecular beam epitaxy using the two-step growth mode and thermal regrowth techniques. The initial stage and the reconstruction of the GaAs/Si heterostructures have been investigated in situ by Auger electron spectroscopy and reflection high-energy electron diffraction. GaAs layers grown by both methods show the reconstruction of a single domain, and models for the process of GaAs growth have been presented to explain the self-annihilation of the antiphase boundary.