INITIAL-STAGE AND RECONSTRUCTION OF GAAS/SI HETEROSTRUCTURES
- Authors
- KIM, TW; KANG, TW; LEEM, JY; YOM, SS; YOON, YS
- Issue Date
- 1992-10-15
- Publisher
- CHAPMAN HALL LTD
- Citation
- JOURNAL OF MATERIALS SCIENCE, v.27, no.20, pp.5603 - 5608
- Abstract
- GaAs epitaxial layers on Si(1 0 0) substrates having a single or a double domain 2 x 1 have been grown by molecular beam epitaxy using the two-step growth mode and thermal regrowth techniques. The initial stage and the reconstruction of the GaAs/Si heterostructures have been investigated in situ by Auger electron spectroscopy and reflection high-energy electron diffraction. GaAs layers grown by both methods show the reconstruction of a single domain, and models for the process of GaAs growth have been presented to explain the self-annihilation of the antiphase boundary.
- Keywords
- DISLOCATION DENSITY REDUCTION; BEAM EPITAXIAL-GROWTH; SINGLE DOMAIN GAAS; SI 100; FILMS; LAYER; DISLOCATION DENSITY REDUCTION; BEAM EPITAXIAL-GROWTH; SINGLE DOMAIN GAAS; SI 100; FILMS; LAYER
- ISSN
- 0022-2461
- URI
- https://pubs.kist.re.kr/handle/201004/146370
- DOI
- 10.1007/BF00541630
- Appears in Collections:
- KIST Article > Others
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