Growth of Al//2O//3 epitaxial films on p-Si substrates by low-pressure metalorganic chemical vapor deposition.

Other Titles
저압하에서 metalorganic chemical vapor deposition 에 의한 p-Si 기판위에 Al//2O//3 결정성을 가진 박막성장 =
Authors
염상섭윤영수T. W. KimW. N. KangP. H. HurC. Y. Kim
Issue Date
1992-01
Citation
응용물리 = Korean appl. phys., v.v. 5, pp.169 - 173
Keywords
thin films; Al//2O//3; MOCVD
URI
https://pubs.kist.re.kr/handle/201004/146553
Appears in Collections:
KIST Article > Others
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