DSpace at KISTKIST ArticleOthers

Full metadata record

DC Field Value Language
dc.contributor.author박용주-
dc.contributor.author박찬용-
dc.contributor.author박승철-
dc.contributor.author한철원-
dc.contributor.author민석기-
dc.contributor.author김기수-
dc.date.accessioned2024-01-21T23:39:33Z-
dc.date.available2024-01-21T23:39:33Z-
dc.date.created2022-01-10-
dc.date.issued1991-12-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/146715-
dc.titleThe observation of striation in GaAs : Si single crystal grown by horizontal bridgman method.-
dc.title.alternative수평 Bridgman 법으로 성장시킨 GaAs : Si 단결정의 Striation 관찰 =-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitation새물리 = New physics, v.v. 31, no.no. 6, pp.709 - 715-
dc.citation.title새물리 = New physics-
dc.citation.volumev. 31-
dc.citation.numberno. 6-
dc.citation.startPage709-
dc.citation.endPage715-
dc.subject.keywordAuthor수평 bridgman-
dc.subject.keywordAuthorstriation-
dc.subject.keywordAuthorAB etching-
dc.subject.keywordAuthorGaAs doped with Si-
Appears in Collections:
KIST Article > Others
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML
Show Simple Item Record

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE