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The observation of striation in GaAs : Si single crystal grown by horizontal bridgman method.

Other Titles

수평 Bridgman 법으로 성장시킨 GaAs : Si 단결정의 Striation 관찰 =

Authors

박용주; 박찬용; 박승철; 한철원; 민석기; 김기수

Issue Date

1991-12

Citation

새물리 = New physics, v.v. 31, no.no. 6, pp.709 - 715

Keywords

수평 bridgman; striation; AB etching; GaAs doped with Si

URI

https://pubs.kist.re.kr/handle/201004/146715

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KIST Article > Others

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