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Si 과 Be 이온이 공동주입된 GaAs 에 대한 전기 및 광학적 특성연구 .

Authors

김은규; 조훈영; 민석기; 이호섭; 강태원; 홍치유

Issue Date

1991-08

Citation

응용물리, v.v. 4, no.no. 3, pp.357 - 362

Keywords

Si and Be ions; co-implantation; GaAs; characterization

URI

https://pubs.kist.re.kr/handle/201004/146767

Appears in Collections:

KIST Article > Others

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