DSpace at KIST: A study on the interface states and capacitance-voltage behavior of InP MIS diode fabricated by plasma assisted oxidation.

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DC Field	Value	Language
dc.contributor.author	강광남	-
dc.contributor.author	이정일	-
dc.contributor.author	이명복	-
dc.contributor.author	임한조	-
dc.contributor.author	J. A. Baglio	-
dc.contributor.author	N. Decola	-
dc.date.accessioned	2024-01-22T00:04:48Z	-
dc.date.available	2024-01-22T00:04:48Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1991-01	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/146910	-
dc.title	A study on the interface states and capacitance-voltage behavior of InP MIS diode fabricated by plasma assisted oxidation.	-
dc.title.alternative	원격 플라즈마 산화법에 의해 제작된 InP MIS 다이오드의 C-V 특성 및 계면상태에 관한 연구 =	-
dc.type	Article	-
dc.description.journalClass	3	-
dc.identifier.bibliographicCitation	새물리, v.v. 31, no.no. 3, pp.296 - ?	-
dc.citation.title	새물리	-
dc.citation.volume	v. 31	-
dc.citation.number	no. 3	-
dc.citation.startPage	296	-
dc.citation.endPage	?	-
dc.subject.keywordAuthor	InP MIS 다이오드	-

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