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A study on the interface states and capacitance-voltage behavior of InP MIS diode fabricated by plasma assisted oxidation.

Other Titles

원격 플라즈마 산화법에 의해 제작된 InP MIS 다이오드의 C-V 특성 및 계면상태에 관한 연구 =

Authors

강광남; 이정일; 이명복; 임한조; J. A. Baglio; N. Decola

Issue Date

1991-01

Citation

새물리, v.v. 31, no.no. 3, pp.296 - ?

Keywords

InP MIS 다이오드

URI

https://pubs.kist.re.kr/handle/201004/146910

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KIST Article > Others

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