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dc.contributor.author김용-
dc.contributor.author김무성-
dc.contributor.author강명구-
dc.contributor.author오환술-
dc.contributor.author엄경숙-
dc.contributor.author민석기-
dc.date.accessioned2024-01-22T00:05:17Z-
dc.date.available2024-01-22T00:05:17Z-
dc.date.created2022-01-10-
dc.date.issued1991-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/146918-
dc.titleMOCVD 법에 의한 delta-doped GaAs FET 소자의 제작 및 특성 .-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitation전자공학회지, v.v. 28, no.no. 8, pp.48 - ?-
dc.citation.title전자공학회지-
dc.citation.volumev. 28-
dc.citation.numberno. 8-
dc.citation.startPage48-
dc.citation.endPage?-
dc.subject.keywordAuthordelta-doped FET-
dc.subject.keywordAuthorMOCVD-
dc.subject.keywordAuthoretching-
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