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MOCVD 법에 의한 delta-doped GaAs FET 소자의 제작 및 특성 .

Authors

김용; 김무성; 강명구; 오환술; 엄경숙; 민석기

Issue Date

1991-01

Citation

전자공학회지, v.v. 28, no.no. 8, pp.48 - ?

Keywords

delta-doped FET; MOCVD; etching

URI

https://pubs.kist.re.kr/handle/201004/146918

Appears in Collections:

KIST Article > Others

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