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Stress released layers formed by pulsed ruby laser annealing on GaAs-on-Si.

Authors

김용; 김무성; KIM, EUN KYU; 김현수; 민석기; 이현우; 김재관; 이주천

Issue Date

1990-04

Publisher

American Institute of Physics

Citation

Journal of Applied Physics, v.v. 67, pp.3358 - 3364

Keywords

GaAs-on-Si; laser annealing; MOCVD

ISSN

0021-8979

URI

https://pubs.kist.re.kr/handle/201004/147110

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KIST Article > Others

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