DSpace at KIST: Si 이온주입된 반절연성 GaAs:Cr 의 열처리에 따른 깊은 준위연구 .

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DC Field	Value	Language
dc.contributor.author	김은규	-
dc.contributor.author	조훈영	-
dc.contributor.author	홍치유	-
dc.contributor.author	민석기	-
dc.contributor.author	이호섭	-
dc.contributor.author	강태원	-
dc.date.accessioned	2024-01-22T00:32:17Z	-
dc.date.available	2024-01-22T00:32:17Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1990-02	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/147145	-
dc.title	Si 이온주입된 반절연성 GaAs:Cr 의 열처리에 따른 깊은 준위연구 .	-
dc.type	Article	-
dc.description.journalClass	3	-
dc.identifier.bibliographicCitation	새물리, v.v. 30, no.no. 1, pp.41 - 46	-
dc.citation.title	새물리	-
dc.citation.volume	v. 30	-
dc.citation.number	no. 1	-
dc.citation.startPage	41	-
dc.citation.endPage	46	-
dc.subject.keywordAuthor	Si ion implantation	-
dc.subject.keywordAuthor	semi-insulating GaAs:Cr	-
dc.subject.keywordAuthor	thermal annealing	-
dc.subject.keywordAuthor	deep level	-

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