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Si 이온주입된 반절연성 GaAs:Cr 의 열처리에 따른 깊은 준위연구 .

Authors

김은규; 조훈영; 홍치유; 민석기; 이호섭; 강태원

Issue Date

1990-02

Citation

새물리, v.v. 30, no.no. 1, pp.41 - 46

Keywords

Si ion implantation; semi-insulating GaAs:Cr; thermal annealing; deep level

URI

https://pubs.kist.re.kr/handle/201004/147145

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KIST Article > Others

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