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dc.contributor.authorKIM, HS-
dc.contributor.authorKIM, EK-
dc.contributor.authorMIN, SK-
dc.contributor.authorLEE, CC-
dc.date.accessioned2024-01-22T00:43:48Z-
dc.date.available2024-01-22T00:43:48Z-
dc.date.created2022-01-10-
dc.date.issued1989-08-
dc.identifier.issn0947-8396-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/147332-
dc.languageEnglish-
dc.publisherSPRINGER VERLAG-
dc.titleX-RAY AND DLTS CHARACTERIZATIONS OF INXGA1-X AS(X-LESS-THAN-0.03)/GAAS LAYERS GROWN BY VPE USING AN IN/GA ALLOY SOURCE-
dc.typeArticle-
dc.identifier.doi10.1007/BF00616292-
dc.description.journalClass1-
dc.identifier.bibliographicCitationAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.49, no.2, pp.143 - 147-
dc.citation.titleAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING-
dc.citation.volume49-
dc.citation.number2-
dc.citation.startPage143-
dc.citation.endPage147-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.identifier.wosidA1989AG02500003-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordAuthorX-ray-
dc.subject.keywordAuthorDLTS-
dc.subject.keywordAuthorInGaAs/GaAs layer-
dc.subject.keywordAuthorVPE-
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