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무전위 GaAs:In 의 급속열처리에 따른 깊은 준위 전자덫 연구 .

Authors

김은규; 조훈영; 박일우; 민석기; 심광보; 한철원; 조성호

Issue Date

1989-02

Citation

새물리, v.v. 29, no.no. 1, pp.50 - 54

Keywords

dislocation free; GaAs:In; rapid thermal annealing; deep level; electron trap

URI

https://pubs.kist.re.kr/handle/201004/147377

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KIST Article > Others

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