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수소화에 의한 GaAs 내의 deep level 생성 .

Authors

김은규; 조훈영; 민석기; 김재붕; 장진

Issue Date

1988-07

Citation

응용물리, v.v. 1, no.no. 2, pp.132 - 136

Keywords

hydrogenation; GaAs; deep level

URI

https://pubs.kist.re.kr/handle/201004/147560

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KIST Article > Others

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