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A stydy on the necleation, growth and shrinkage of oxidation induced stacking faults(OSF);-part II : Role of SiO//2 layer on the shrinkage of oxidation induced stacking faults(OSF) in P-type CZ silico

Authors

김용태; 민석기

Issue Date

1988-01

Citation

J. Kor. inst. telem. elec., v.v. 25, pp.767 - 772

URI

https://pubs.kist.re.kr/handle/201004/147608

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KIST Article > Others

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