Spintronics and magnetic memory devices

Authors
Choi, Gyung-MinLee, OukjaeChung, SunjaeKim, WoojinLee, TaeyoungPark, Byong-GukYang, Seungmo
Issue Date
2025-09
Publisher
TAYLOR & FRANCIS LTD
Citation
Advances in Physics: X, v.10, no.1
Abstract
Spintronics technology enables electrical reading and writing of magnetization orders, thus have led to development of magnetic random access memory (MRAM). Owing to its superior properties of size, speed, and endurance, MRAM is promising for applications in internet-of-things, automotive microcontrollers, and data centers. Here, we review key spintronic technologies of magnetoresistance and spin-transfer torque, which are the operating mechanism for MRAM, and properties and status of MRAM commercialization. We also review recent achievements and future challenges in emerging topics of spin-orbit torque, voltage gating, orbitronics, and antiferromagnetic spintronics, and new applications of spin-torque oscillators, probabilistic computing, and skyrmion-based applications.
Keywords
SPIN-TRANSFER-TORQUE; ROOM-TEMPERATURE MAGNETORESISTANCE; TUNNEL-JUNCTION; GIANT MAGNETORESISTANCE; ORBIT TORQUES; PERPENDICULAR MAGNETIZATION; VOLTAGE-DEPENDENCE; SKYRMION LATTICE; ELECTRIC-CURRENT; PHASE-LOCKING; Spintronics; magnetic memory; MRAM
ISSN
2374-6149
URI
https://pubs.kist.re.kr/handle/201004/153263
DOI
10.1080/23746149.2025.2557918
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KIST Article > Others
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