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Issue DateTitleAuthor(s)
-Development of Etch Stop Process by Using Selective Dry Etching of SrBi2Ta2O9/Y2O3SHIN, SUN IL; Kwon Young Suk; Kim, Seong Il; Kim, Yong Tae; Jung Ho Park
-Effect of excess bismuth on ferroelectric properties of Bi4-xNdxTi3O12 thin filmsYoung Mi Kim; KIM IK SOO; In-Hoon Choi; Kim Woo Sik; Kim, Yong Tae; Kim, Young Hwan
-Multibit operation of MFISFET with Pt/SrBi2Ta2O9/Y2O3/Si gate structureSHIN, SUN IL; Kwon Young Suk; KIM IK SOO; Kim, Seong Il; Kim, Yong Tae; Jeong Ho Park
-Fabrication and characterization of rare-earth doped AlGaN for light source application of bio-MEMSAkihiro Wakahara; Tetsuya Fujiwara; Yasuo Hakanishi; Hiroshi Okada; Akira Yoshida; Takeshi Ohshima; Tomihiro Kamiya; Kim, Yong Tae
-Activation Energy Asymptotics Revisited (I) - Quasisteady Extinction Condition of Diffusion FlamesKim, Jong Soo
-Electrical Properties of Field Effect Transistor with (Bi,La)Ti3O12 Ferroelectric Gate Film on Y2O3/Si SubstrateHo Jung Chang; Kang Mo Suh; Park Ji Ho; Ho Sung Chang; Soon Chan Hong; Kim, Yong Tae; Makoto Ishida
-Circuit Design and Full Chip Simulation for Single Transistor Type Ferroelectric Random Access MemoryKim, Seong Il; Kim, Yong Tae; Kim, Young Hwan; SHIN, SUN IL; Jung Ho Park
-Sol-gel derived Nd-substitutied Bi4Ti3O12 thin film and its electrical propertiesKim, Young Hwan; Kim, Yong Tae; KIM IK SOO; Young Mi Kim; In-Hoon Choi
-Reduction of phase changing voltage in Phase change random access memory by using edge contact structureKim, Yong Tae; Minsoo Youm; SHIN, SUN IL; Kim, Seong Il
-Analysis of Spin-polarized transport in th two-dimensional electron gas of spin field effect transistorKim, Yong Tae; Gab Yong Lee; Chang Woo Lee

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