| - | Effect of excess bismuth on ferroelectric properties of Bi4-xNdxTi3O12 thin films | Young Mi Kim; KIM IK SOO; In-Hoon Choi; Kim Woo Sik; Kim, Yong Tae; Kim, Young Hwan |
| - | Multibit operation of MFISFET with Pt/SrBi2Ta2O9/Y2O3/Si gate structure | SHIN, SUN IL; Kwon Young Suk; KIM IK SOO; Kim, Seong Il; Kim, Yong Tae; Jeong Ho Park |
| - | Fabrication and characterization of rare-earth doped AlGaN for light source application of bio-MEMS | Akihiro Wakahara; Tetsuya Fujiwara; Yasuo Hakanishi; Hiroshi Okada; Akira Yoshida; Takeshi Ohshima; Tomihiro Kamiya; Kim, Yong Tae |
| - | Activation Energy Asymptotics Revisited (I) - Quasisteady Extinction Condition of Diffusion Flames | Kim, Jong Soo |
| - | Electrical Properties of Field Effect Transistor with (Bi,La)Ti3O12 Ferroelectric Gate Film on Y2O3/Si Substrate | Ho Jung Chang; Kang Mo Suh; Park Ji Ho; Ho Sung Chang; Soon Chan Hong; Kim, Yong Tae; Makoto Ishida |
| - | Circuit Design and Full Chip Simulation for Single Transistor Type Ferroelectric Random Access Memory | Kim, Seong Il; Kim, Yong Tae; Kim, Young Hwan; SHIN, SUN IL; Jung Ho Park |
| - | Sol-gel derived Nd-substitutied Bi4Ti3O12 thin film and its electrical properties | Kim, Young Hwan; Kim, Yong Tae; KIM IK SOO; Young Mi Kim; In-Hoon Choi |
| - | Reduction of phase changing voltage in Phase change random access memory by using edge contact structure | Kim, Yong Tae; Minsoo Youm; SHIN, SUN IL; Kim, Seong Il |
| - | Analysis of Spin-polarized transport in th two-dimensional electron gas of spin field effect transistor | Kim, Yong Tae; Gab Yong Lee; Chang Woo Lee |
| - | Improvement of W-N films Using WF6 Pulse Plasma Atomic Layer Deposition | Hyun Sang Sim; Park Ji Ho; Kim, Seong Il; Kim, Yong Tae |
