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Issue Date | Title | Author(s) |
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1999-03-28 | Characteristics of SrBi2Ta2O9 thin films grown by MOCVD using a new stontium tantalum ethoxide (Sr[Ta(OEt)6]2) source | Kim, Yong Tae |
1999-03-28 | Effects of boron implantation on the structural and diffusion barrier properties of W-N thin film | Kim, Yong Tae |
1994-07-01 | Characteristics of Amorphous Tungsten Nitride Diffusion Barrier for Metal-Organic Chemical Vapor deposited Cu Metallization | Kim, Yong Tae |
1994-07-01 | TEM studies of plasma deposited tungsten and tungsten nitride barriers for thermally stable metallization | Kim, Yong Tae |
1994-07-01 | Comparization of amorphous and polycrystalline tungsten nitride diffusion barrier for MOCVD-Cu metallization | Kim, Yong Tae |
1994-07-01 | Effects of Pt and W2N/W bottom electrode dielectric properties of BaTiO3 thin films | Kim, Yong Tae |
1994-07-01 | Thermal stability of plasma deposited tungsten nitride thin films for VLSI devices | Kim, Yong Tae |
1995-07-01 | Effect of bottom electrodes on the structural and electrical properties of the ferroelectric lead titanate (PbTiO3) thin films | Kim, Yong Tae |
1995-07-01 | Deposition and properties of PbTiO3 Thin Films on various substrates by metal-organic chemical vapor deposition | Kim, Yong Tae |
1995-07-01 | The properties of nitrogen implanted tungsten diffusion barrier for Cu metallization | Kim, Yong Tae |
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