Far-infrared/THz photodetector with self-assembled Quantum dots

Authors
Nam, H.Song, J.Choi, W.Lee, J.Yang, H.Zhang, B.Lu, W.
Issue Date
2005-10
Publisher
MWP
Citation
International Topical Meeting on Microwave Photonics, MWP 2005, pp.289 - 292
Abstract
In this paper, we report 21 μm photoresponse with InAs/InGaAs/GaAs quantum-dot-in-a-well photodetector structure. The self-assembled InAs quantum dots were grown on InGaAs/GaAs well structure via atomic layer molecular beam epitaxy and fabricated as intersubbamd photoconductlve structure. The far-infrared/THz 21 μm photoresponse was measured at 4.2K. Photoresponses were observed over the range of λ = 3 μm to 25μm with peaks at 21, 15, 8 μm, respectively.
ISSN
0000-0000
URI
https://pubs.kist.re.kr/handle/201004/81974
Appears in Collections:
KIST Conference Paper > 2005
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