Far-infrared/THz photodetector with self-assembled Quantum dots
- Authors
- Nam, H.; Song, J.; Choi, W.; Lee, J.; Yang, H.; Zhang, B.; Lu, W.
- Issue Date
- 2005-10
- Publisher
- MWP
- Citation
- International Topical Meeting on Microwave Photonics, MWP 2005, pp.289 - 292
- Abstract
- In this paper, we report 21 μm photoresponse with InAs/InGaAs/GaAs quantum-dot-in-a-well photodetector structure. The self-assembled InAs quantum dots were grown on InGaAs/GaAs well structure via atomic layer molecular beam epitaxy and fabricated as intersubbamd photoconductlve structure. The far-infrared/THz 21 μm photoresponse was measured at 4.2K. Photoresponses were observed over the range of λ = 3 μm to 25μm with peaks at 21, 15, 8 μm, respectively.
- ISSN
- 0000-0000
- URI
- https://pubs.kist.re.kr/handle/201004/81974
- Appears in Collections:
- KIST Conference Paper > 2005
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